new product (unit:mm) SST323R-03 is a high sensitivity npn silicon phototransistor mounted in a black sidelooking package,it is compact and easy to mount. features compact low-cost sidelooking plastic package application photointerrupters optical detectors optical counters maximum ratings (ta= 25 ) itemsymbolratingunit c-e voltage v ceo 30v e-c voltage v eco 5v collector current i c 20ma collector power dissipation p c 75mw operating temp.topr. -25 +85 storage temp.tstg. -30 +85 soldering temp. * 1tsol.260 *1. lead soldering temperature(3mm from case for 5sec) electro- optical characteristics (ta= 25 ) itemssymbolmin. typ. max. unit collector dark currenticeo v ceo =10v --100na light currenti l v ce =5v,e v =1000 lx * 2 1.4--ma c-e saturation voltagevce(sat ) i c =0.5ma,e v =2000 lx * 2 - -0.4v switching speeds rise timetr3.2 sec switching speeds fall timetf -4.8 - sec spectral sensitivity nm peak wavelength p -880 -nm half angle - 20-deg. *2. irradiance by cie standard light source a (2856k tungsten lamp) the contents of this data sheet are subject to change without advance notice for the purpose of improvement. when using this product, would you please refer to the latest specifications. SST323R-03 photo transistor condition v cc =10v, i c = 5ma , r l =100 700 1,050 dec, 2013 dimensions notes: 1.general tolerance : 0.2 2.pin configuration ? emitter collector 2.3 2.05 0.15 2.15 0.15 0.8 1.5 1.6 2.4 0.1max 2.3 1.1 0.5 0.5 0.5 1.8 1 2 0.4
photo transistor the contents of this data sheet are subject to change without advance notice for the purpose of improvement. when using this product, would you please refer to the latest specifications. dec, 2013 SST323R-03 tr tf 2040 () 100 80 dark current vs. ambient temperature 60 power dissipation pc 0 040 20 50 100 () 100 80 power dissipation vs. ambient temperature (mw) ambient temperature ta 25 75 120 10 10 -1 (lx) illuminance ev 10 1 2 10 4 3 10 collector current ic 10 0 1 10 10 2 (ma) illuminance collector current vs. vce=5v ta=25 ( ) load resistance response time vs. ( s) 10 0 10 10 1 2 10 3 response time tr,tf vcc=5v ic=1ma ta=25 load resistance r 1010 1 2 10 4 3 10 l i fp vcc vout * response time measurement circuit i pce input output 90% 10% tr tf 6 collector-emitter voltage vce 024(v) 810 4 6 8 2 0 (ma) ta=25 collector-emitter voltage ev=1000lx collector current ic collector current vs. ev=500lx ev=1500lx ev=2000lx 60 relative intensity s 900 wavelength 600 500 0 4007008001100 (nm) 1000 20 40 80 100 (%) relative sensitivity vs. wavelengh ta=25 -40 +40 relative sensitivity(%) 100 50 +100 0 50 100 -100 50 +60 +80 -80 -60 angle(deg.) +20 0 -20 ta=25 (na) vce=5v ambient temperature ta 0 10 -1 10 dark current iceo 10 0 1 10 2 60
photo transistor packing specification 1.fixed quantity (5000pcs) of the products are packed into plastic reel 2.tow reels of the products are put into box 3. five boxes are put into #3 box (max 50,000pcs) 4. packing slit is pasted on the out box the contents of this data sheet are subject to change without advance notice for the purpose of improvement. when using this product, would you please refer to the latest specifications. dec, 2013 SST323R-03
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